Memory effects in magnetoplasticity of NaCl crystals

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Resumo

Memory effects in magnetoplasticity of NaCl crystals with different impurity content are studied. Dislocation paths and microhardness of crystals after their exposure to a constant magnetic field or to crossed ultralow magnetic fields are measured. In two crystals, noticeable relaxation displacements of dislocations, introduced after exposure, are found. In two other crystals with a lower impurity concentration, the paths remain at the background level, but in one of them, exposure causes an increase in the density of mobile dislocations. Similar magnetic exposure also leads to a decrease in the microhardness of crystals, but to different extent. Interpretation of observations is reduced to a spin-dependent transformation of impurity centers in a magnetic field, which plasticizes the crystal. Introduction of dislocations after magnetic exposure leads to their relaxation displacements from unstable positions, and at strongly weakened pinning centers, dislocations straight away take up positions close to equilibrium.

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Sobre autores

M. Koldaeva

National Research Center “Kurchatov Institute”

Autor responsável pela correspondência
Email: mkoldaeva@ns.crys.ras.ru

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics

Rússia, Moscow

E. Petrzhik

National Research Center “Kurchatov Institute”

Email: mkoldaeva@ns.crys.ras.ru

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics

Rússia, Moscow

V. Alshits

National Research Center “Kurchatov Institute”

Email: mkoldaeva@ns.crys.ras.ru

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics

Rússia, Moscow

V. Kvartalov

National Research Center “Kurchatov Institute”

Email: mkoldaeva@ns.crys.ras.ru

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics

Rússia, Moscow

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2. Fig. 1. Sequence of actions in the experiments in the magnetic memory mode (a) and in situ (b). The asterisks mark the moments of selective etching, the vertical arrow marks the moment of dislocation introduction. Times tM are the duration of magnetic exposure, tIn are the interval between the end of magnetic exposure and the introduction of fresh dislocations, tW is the interval between the second and third etchings.

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3. Fig. 2. Dependences of the average normalized dislocation path (a, b) and the relative density of mobile dislocations ρm /ρf (c) on the exposure parameters B2tM in a constant magnetic field in the in situ (a) and magnetic memory (b, c) modes for NaClLOMO:Ni (1, 1'), NaClLOMO (2), NaClHun (3) and NaClNik (4) crystals. Fixed exposure parameters: 1 – B = 0.3 T; 1', 2 – tM = 5 min (a), tM = 20 min (b, c); 3, 4 – B = 0.5 T (a), tM = 20 min (b, c). Dotted lines indicate background levels.

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4. Fig. 3. Dependences of the average normalized dislocation paths on the exposure time tM in magnetic fields BEarth ⊥ B in the in situ (a) and magnetic memory (b) modes for two crystals NaClLOMO:Ni (1) and NaClLOMO (2). BEarth = 50 μT and B ≈ 3 μT, the resonant frequencies of the pump field are 1.38 (a) and 1.52 MHz (b). In the magnetic memory mode, dislocations were introduced into the crystal immediately after magnetic exposure tIn = 0, the pause between the second and third etchings tW = 1.5 h. The dotted line marks the level of dislocation paths in the absence of magnetic action.

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5. Fig. 4. Dependences of the change in microhardness on time t after exposure to a constant magnetic field (B = 1.2 T, tM = 20 min) for NaClLOMO:Ni (1), NaClLOMO (2) and NaClHun (3) crystals.

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6. Fig. 5. Dependences of the average normalized dislocation paths in NaClLOMO:Ni crystals on the pause between the second and third etchings tW. Exposure parameters in magnetic fields BEarth ⊥ B (light dots): tM = 5 min, BEarth = 50 μT and B = 2.5 μT, resonant frequency of the pump field 1.52 MHz. Dark dots (dashed line) are the results of a similar experiment, but in the absence of magnetic action. The second etching was carried out immediately after the introduction of fresh dislocations (tIn = 0).

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7. Fig. 6. Dependences of the average normalized dislocation paths (a, c) and the relative density of mobile dislocations ρm /ρf (b, d) on the pause between etchings tW (a, b) and on the total time tM + tW (c, d) for NaClLOMO crystals. The introduction of dislocations was carried out immediately after the end of the exposure (tIn = 0) in magnetic fields BEarth ⊥ B: tM = 1 (1), 2 (2), 3 (3), 5 (4), 10 (5) and 20 (6) min, BEarth = 50 μT and B = 2.5 μT, the resonant frequency of the pump field is 1.52 MHz.

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8. Fig. 7. Dependences of the microhardness (a) of the NaClLOMO:Ni crystal on the time t elapsed after magnetic exposure, and the paths of dislocations (b) introduced into the NaClLOMO:Ni (1) and NaClLOMO (2) crystals at the time tIn. Parameters of exposure in magnetic fields BEarth ⊥ B: BEarth = 50 μT, resonant frequency of the pump field 1.52 MHz; B = 3.1 μT, tM = 30 min (a); B = 2.5 μT, tM = 20 min (b). The second and third etchings were carried out practically without a pause (tW = 0).

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